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EMP48N06G Datasheet

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Excelliance MOS · EMP48N06G File Size : 305.07KB · 5 hits

Features and Benefits

ACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transcond.

EMP48N06G EMP48N06G EMP48N06G
TAGS
N-Channel
Logic
Level
Enhancement
Mode
Field
Effect
Transistor
EMP48N06G
EMP-8603
EMP11
Stock and Price
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